Piezolectric conversion type semiconductor device



FIG. 1 is a front elevational view of a piezoelectric conversion typesemiconductor device, showing our new design;

FIG. 2 is a right side elevational view thereof; the opposite side beingan identical thereof;

FIG. 3 is a rear elevational view thereof;

FIG. 4 is a top plan view thereof;

FIG. 5 is a bottom plan view thereof;

FIG. 6 is a front elevational view of a second embodiment of thepiezoelectric conversion type semiconductor device;

FIG. 7 is a right side elevational view thereof; the opposite side beinga mirror image thereof;

FIG. 8 is a rear elevational view thereof;

FIG. 9 is a top plan view thereof;

FIG. 10 is a bottom plan view thereof;

FIG. 11 is a front elevational view of a third embodiment of thepiezoelectric conversion type semiconductor device;

FIG. 12 is a right side elevational view thereof; the opposite sidebeing an identical thereof;

FIG. 13 is a rear elevational view thereof;

FIG. 14 is a top plan view thereof;

FIG. 15 is a bottom plan view thereof;

FIG. 16 is a front elevational view of a fourth embodiment of thepiezoelectric conversion type semiconductor device;

FIG. 17 is a right side elevational view thereof; the opposite sidebeing a mirror image thereof;

FIG. 18 is a rear elevational view thereof;

FIG. 19 is a top plan view thereof; and,

FIG. 20 is a bottom plan view thereof.

The ornamental design for a piezoelectric conversion type semiconductordevice, as show and described.